 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SPW20N60CFD Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Intrinsic fast-recovery body diode * Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7 P-TO247 V A Type SPW20N60CFD Package P-TO247 Ordering Code Q67040-S4617 Marking 20N60CFD Maximum Ratings Parameter Continuous drain current T C = 25 C T C = 100 C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 10 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode dv/dt IS=20.7A, V DS=480V, T j=125C Symbol ID Value 20.7 13.1 52 690 1 20 40 20 30 208 -55... +150 Unit A ID puls EAS mJ IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C Operating and storage temperature Page 1 2003-12-23 SPW20N60CFD Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 C Symbol dv/dt di F/dt Value 80 900 Unit V/ns A/s Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V GS(th) IDSS ID=1000, V GS=VDS V DS=600V, V GS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA T sold - Values typ. max. 0.6 62 260 Unit K/W C Symbol Conditions min. 600 3 - Values typ. 700 4 2.1 1700 0.19 0.51 0.54 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=20A A 100 0.22 nA Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) V GS=20V, V DS=0V V GS=10V, I D=13.1A, Tj=25C Tj=150C Gate input resistance RG f=1MHz, open Drain Page 2 2003-12-23 SPW20N60CFD Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance,2) energy related Effective output capacitance,3) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=480V, I D=20.7A, V GS=0 to 10V V DD=480V, I D=20.7A Symbol g fs Ciss Coss Crss Co(er) Co(tr) td(on) tr td(off) tf Conditions min. V DS2*I D*RDS(on)max, ID=13.1A V GS=0V, VDS=25V, f=1MHz Values typ. 17.5 2400 780 50 83 160 12 15 59 6.4 max. - Unit S pF V GS=0V, V DS=0V to 480V pF V DD=380V, V GS=0/10V, ID=20.7A, RG=3.6 - ns - 15 54 95 7 124 - nC V(plateau) V DD=480V, I D=20.7A V 1Repetitve avalanche causes additional power losses that can be calculated as P AV=EA R*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS. Page 3 2003-12-23 SPW20N60CFD Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current V SD trr Qrr Irrm di rr/dt V GS=0V, IF=I S V R=480V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 150 1 13 1400 max. 20.7 52 1.2 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.007686 0.015 0.029 0.114 0.136 0.059 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0003764 0.001412 0.001932 0.005299 0.012 0.091 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case External Heatsink C th1 C th2 C th,n T amb Page 4 2003-12-23 SPW20N60CFD 1 Power dissipation Ptot = f (TC) 240 SPW20N60CFD 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 W 200 180 A 10 1 P tot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 10 -2 ID 10 0 10 -1 tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC C 160 10 0 10 1 10 2 TC V 10 VDS 3 3 Transient thermal impedance ZthJC = f (tp) parameter: D = t p/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS Vgs = 10V Vgs = 8V A Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V 50 Vgs = 5.5V Vgs = 5V 40 70 K/W 10 -1 ZthJC 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse ID 10 -4 -7 -6 -5 -4 -3 -2 30 20 10 10 10 10 10 10 10 s 10 tp 0 0 0 4 8 12 16 20 V 28 VDS Page 5 2003-12-23 SPW20N60CFD 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS Vgs = 20V A Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V 30 Vgs = 5.5V Vgs = 5V Vgs = 4.5V 25 40 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 1.5 R DS(on) ID Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 20V 20 0.9 15 10 0.6 5 0 0 4 8 12 16 20 V 0.3 28 0 5 10 15 20 25 30 V DS A 40 ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V 1.3 SPW20N60CFD 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 70 A 1.1 1 Tj = 25C R DS(on) 0.9 0.8 0.7 0.6 50 ID Tj = 150C 40 30 0.5 0.4 0.3 0.2 0.1 0 -60 -20 20 60 100 C 20 98% typ 10 0 180 0 4 8 12 V 20 Tj Page 6 VGS 2003-12-23 SPW20N60CFD 9 Typ. gate charge VGS = f (QGate) parameter: ID = 20.7 A pulsed 16 V SPW20N60CFD 10 Forward characteristics of body diode IF = f (V SD) parameter: Tj , tp = 10 s 10 2 SPW20N60CFD A 0.2 VDS max 0.8 VDS max 12 V GS 10 1 8 6 IF 10 0 10 4 T j = 25 C typ T j = 150 C typ T j = 25 C (98%) T j = 150 C (98%) 10 0 20 40 60 80 100 120 nC 150 -1 2 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: T j 150 C 20 12 Avalanche energy EAS = f (T j) par.: ID = 10 A, V DD = 50 V 750 mJ A 600 550 EAS Tj(Start)=25C I AR 500 450 400 350 300 250 10 5 Tj(Start)=125C 200 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 t AR 4 0 20 40 60 80 100 120 C 160 Tj Page 7 2003-12-23 SPW20N60CFD 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) SPW20N60CFD 14 Avalanche power losses PAR = f (f ) parameter: EAR=1mJ 500 720 V W V (BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 P AR 300 100 -20 20 60 100 C 180 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(V DS) 14 pF J 10 4 10 Ciss C E oss 8 6 4 2 10 3 10 2 Coss Crss 10 1 0 100 200 300 400 V 0 600 0 100 200 300 400 V 600 V DS VDS Page 8 2003-12-23 SPW20N60CFD 17 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 20.7A 1800 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/s 1800 C C 1600 1500 1600 1400 Tj = 125C Qrr Qrr 1500 1300 1200 1400 1100 1000 Tj = 25C 1300 900 800 1200 700 1100 600 500 1000 25 50 75 C Tj 400 125 2 4 6 8 10 12 14 16 A 20 ID 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 20.7 A 3400 C 3000 2800 Tj = 125C Qrr 2600 2400 2200 2000 1800 1600 1400 1200 1000 100 200 300 400 500 600 700 Tj = 25C A/s 900 di/dt Page 9 2003-12-23 SPW20N60CFD Definition of diodes switching characteristics Page 10 2003-12-23 SPW20N60CFD P-TO-247-3-1 Page 11 2003-12-23 SPW20N60CFD Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-12-23 |
Price & Availability of SPW20N60CFD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |